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RP1E090RP - 4V Drive Pch MOSFET

Features

  • 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
  • Dimensions (Unit : mm) MPT6 (6) (5) (4) (1) (2) (3).

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Datasheet Details

Part number RP1E090RP
Manufacturer ROHM
File Size 137.19 KB
Description 4V Drive Pch MOSFET
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4V Drive Pch MOSFET RP1E090RP  Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Dimensions (Unit : mm) MPT6 (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E090RP Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 30 20 9 36 1.6 36 2.0 150 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
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