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RP1E100XN - N-Channel MOSFET

Features

  • 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
  • Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3).

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Datasheet Details

Part number RP1E100XN
Manufacturer ROHM
File Size 169.43 KB
Description N-Channel MOSFET
Datasheet download datasheet RP1E100XN Datasheet

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4V Drive Nch MOSFET RP1E100XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E100XN Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch 30 20 10 36 1.6 36 2.0 150 Range of storage temperature Tstg 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
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