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S6301 - SiC Schottky Barrier Diode Bare Die

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 5.
  • 1 23.
  • 2 IFSM.

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Datasheet Details

Part number S6301
Manufacturer ROHM
File Size 330.37 KB
Description SiC Schottky Barrier Diode Bare Die
Datasheet download datasheet S6301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S6301 SiC Schottky Barrier Diode Bare Die VR 1200V IF 5A*1 QC 17nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 5*1 23*2 IFSM 87*3 18*4 IFRM 25*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.