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S6302 - SiC Schottky Barrier Diode Bare Die

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 10.
  • 1 45.
  • 2 IFS.

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Datasheet Details

Part number S6302
Manufacturer ROHM
File Size 405.14 KB
Description SiC Schottky Barrier Diode Bare Die
Datasheet download datasheet S6302 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S6302 SiC Schottky Barrier Diode Bare Die VR 1200V IF 10A*1 QC 34nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 10*1 45*2 IFSM 190*3 33*4 IFRM 46*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10ms square,Tj=25°C *4 Pw=8.