Datasheet4U Logo Datasheet4U.com

S6306 - SiC Schottky Barrier Diode Bare Die

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 15.
  • 1 65.
  • 2 IFS.

📥 Download Datasheet

Datasheet Details

Part number S6306
Manufacturer ROHM
File Size 330.46 KB
Description SiC Schottky Barrier Diode Bare Die
Datasheet download datasheet S6306 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
S6305MG Red Laser Diode Roithner LaserTechnik
S6310MG Infrared Laser Diode Roithner LaserTechnik
S6370 Low Power Switching Applications Toshiba
S63FH-XD01 Wide Plasma Display Module Samsung
S63HW-XD04 Wide Plasma Display Module Samsung

Other Datasheets by ROHM

Part Number Description
S6301 SiC Schottky Barrier Diode Bare Die
S6302 SiC Schottky Barrier Diode Bare Die
S6304 SiC Schottky Barrier Diode Bare Die
S6307 SiC Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S6306 SiC Schottky Barrier Diode Bare Die VR 1200V IF 15A*1 QC 51nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 15*1 65*2 IFSM 240*3 49*4 IFRM 63*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.