ROHM Semiconductor S6306
SiC Schottky Barrier Diode Bare Die
| Part No. | S6306 |
|---|---|
| Datasheet | S6306 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | SiC Schottky Barrier Diode Bare Die |
| Buy | Stock & Price |
S6306 SiC Schottky Barrier Diode Bare Die VR 1200V IF 15A*1 QC 51nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 15*1 65*2 IFSM 240*3 49*4 IFRM 63*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj Unit V V A A A A A °C °C © 2014 ROHM Co., Ltd. All rights reserved. 1/3 2014.05 - Rev.A S6306 Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0...
