Part S6306
Description SiC Schottky Barrier Diode Bare Die
Category Diode
Manufacturer ROHM
Size 330.46 KB
ROHM
S6306

Overview

  • 1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj Unit V V A A A A A °C °C © 2014 ROHM Co., Ltd. All rights reserved. 1/3
  • 05 - Rev.A S6306 Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0.3mA 1200 - - IF=15A,Tj=25°C - 1.4 1.6 Forward voltage VF IF=15A,Tj=150°C - 1.8 - IF=15A,Tj=175°C - 1.9 - VR=1200V,Tj=25°C - 15 300 Reverse current IR VR=1200V,Tj=150°C - 120 - VR=1200V,Tj=175°C - 195 - Total capacitance VR=1V,f=1MHz C VR=800V,f=1MHz - 790 - 63 - Total capacitive charge Qc VR=800V,di/dt=500A/ms - 51 - Switching time tc VR=800V,di/dt=500A/ms - 18 - Unit V V V V mA mA mA pF pF nC ns © 2014 ROHM Co., Ltd. All rights reserved. 2/3
  • 05 - Rev.A S6306 lElectrical characteristic curves Data Sheet Forward Current : IF [A] Fig.1 VF - IF Characteristics 100 Pulsed 10 Ta=175ºC 1 Ta=125ºC 0.1 Ta=75ºC
  • 01 Ta=25ºC Ta= -25ºC
  • 001 0.0
  • 5 1.0 1.5 2.0 Forward Voltage : VF [V]
  • 5 Forward Current : IF [A] Fig.2 VF - IF Characteristics 25 Pulsed Ta= -25ºC 20 Ta=25ºC Ta=75ºC 15 10 Ta=125ºC Ta=175ºC 5 0 0.0 0.5 1.0 1.5 2.0 2.5 Forward Voltage : VF [V] Reverse