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S6304 - SiC Schottky Barrier Diode Bare Die

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 20.
  • 1 82.
  • 2 IFS.

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Datasheet Details

Part number S6304
Manufacturer ROHM
File Size 330.17 KB
Description SiC Schottky Barrier Diode Bare Die
Datasheet download datasheet S6304 Datasheet

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Other Datasheets by ROHM

Part Number Description
S6301 SiC Schottky Barrier Diode Bare Die
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S6307 SiC Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S6304 SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 QC 65nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 20*1 82*2 IFSM 310*3 62*4 IFRM 77*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.