Datasheet4U Logo Datasheet4U.com

S6304 - SiC Schottky Barrier Diode Bare Die

Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 20.
  • 1 82.
  • 2 IFS.

📥 Download Datasheet

Datasheet preview – S6304

Datasheet Details

Part number S6304
Manufacturer ROHM
File Size 330.17 KB
Description SiC Schottky Barrier Diode Bare Die
Datasheet download datasheet S6304 Datasheet
Additional preview pages of the S6304 datasheet.

📁 Similar Datasheet

  • S6305MG - Red Laser Diode (Roithner LaserTechnik)
  • S6310MG - Infrared Laser Diode (Roithner LaserTechnik)
  • S6370 - Low Power Switching Applications (Toshiba)
  • S63FH-XD01 - Wide Plasma Display Module (Samsung)
  • S63HW-XD04 - Wide Plasma Display Module (Samsung)
  • S63HW-XD05 - Colour Television Service Manual (Philips)
Other Datasheets by Rohm
  • S6301 - SiC Schottky Barrier Diode Bare Die
  • S6302 - SiC Schottky Barrier Diode Bare Die
  • S6306 - SiC Schottky Barrier Diode Bare Die
  • S6307 - SiC Schottky Barrier Diode

Full PDF Text Transcription

Click to expand full text
S6304 SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 QC 65nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 20*1 82*2 IFSM 310*3 62*4 IFRM 77*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.
Published: |