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RU1H36S - N-Channel Advanced Power MOSFET

Description

TO-263 Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Tempe

Features

100V/32A, RDS (ON) =34mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

Ruichips

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Datasheet Details

Part number	RU1H36S
Manufacturer	Ruichips
File Size	278.71 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H36S Datasheet

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Full PDF Text Transcription

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RU1H36S N-Channel Advanced Power MOSFET MOSFET Features • 100V/32A, RDS (ON) =34mΩ(Typ.

Published: Apr 10, 2017 |