RU1H35K Key Features
- 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V
- Super High Dense Cell Design
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)
- Part: RU1H35K
- Manufacturer: Ruichips
- Size: 267.39 KB
Related Ruichips Datasheets
| Part Number | Description |
|---|---|
| RU1H35L | N-Channel Advanced Power MOSFET |
| RU1H35Q | N-Channel Advanced Power MOSFET |
| RU1H35R | N-Channel Advanced Power MOSFET |
| RU1H35S | N-Channel Advanced Power MOSFET |
| RU1H300Q | N-Channel Advanced Power MOSFET |
RU1H35K Description
A APR., 2013 1 .ruichips. RU1H35K (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H35K Min. ①Pulse width limited by safe operating area.