Datasheet Details
| Part number | RU1H35K |
|---|---|
| Manufacturer | Ruichips |
| File Size | 267.39 KB |
| Description | N-Channel Advanced Power MOSFET |
| Download | RU1H35K Download (PDF) |
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| Part number | RU1H35K |
|---|---|
| Manufacturer | Ruichips |
| File Size | 267.39 KB |
| Description | N-Channel Advanced Power MOSFET |
| Download | RU1H35K Download (PDF) |
|
|
|
Applications • High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 100 ±25 175 -55 to 175 40 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 160 A 40 A 30 97 W 48 1.55 °C/W 100 °C/W 90 mJ Ruichips Semiconductor Co., Ltd Rev.
A– APR., 2013 1 www.ruichips.com RU1H35K Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H35K Min.
Typ.
RU1H35K N-Channel Advanced Power MOSFET.
| Part Number | Description |
|---|---|
| RU1H35L | N-Channel Advanced Power MOSFET |
| RU1H35Q | N-Channel Advanced Power MOSFET |
| RU1H35R | N-Channel Advanced Power MOSFET |
| RU1H35S | N-Channel Advanced Power MOSFET |
| RU1H300Q | N-Channel Advanced Power MOSFET |
| RU1H36L | N-Channel Advanced Power MOSFET |
| RU1H36R | N-Channel Advanced Power MOSFET |
| RU1H36S | N-Channel Advanced Power MOSFET |
| RU1H100 | N-Channel Advanced Power MOSFET |
| RU1H100R | N-Channel Advanced Power MOSFET |