RU1H35S Overview
TO-263 Applications Switching application N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC...
RU1H35S Key Features
- 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V
- Super High Dense Cell Design
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)