RU1H35L Overview
TO-252 Applications High Speed Power Switching N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode.
RU1H35L Key Features
- 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V
- Super High Dense Cell Design
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)