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RU1H300Q Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1H300Q
Manufacturer Ruichips
File Size 276.92 KB
Description N-Channel Advanced Power MOSFET
Download RU1H300Q Download (PDF)

General Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 100 ±25 175 -55 to 175 300 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 1200 300 210 600 300 0.25 50 A A W °C/W °C/W 2450 mJ Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2013 1 www.ruichips.com RU1H300Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H300Q Min.

Typ.

Overview

RU1H300Q N-Channel Advanced Power MOSFET.

Key Features

  • 100V/300A, RDS (ON) =3mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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