Datasheet4U.com

RU1H35Q - N-Channel Advanced Power MOSFET

Description

TO-247 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Conti

Features

100V/40A, RDS (ON) =21mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

Ruichips

📥 Download Datasheet

RU1H35Q n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU1H35Q
Manufacturer	Ruichips
File Size	283.99 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H35Q Datasheet

📁 Similar Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1 - FAST RECOVERY RECTIFIER DIODES (EIC)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)
RU1A - Silicon Diode (Sanken)

Other Datasheets by Ruichips

RU1H35K - N-Channel Advanced Power MOSFET
RU1H35L - N-Channel Advanced Power MOSFET
RU1H35R - N-Channel Advanced Power MOSFET
RU1H35S - N-Channel Advanced Power MOSFET
RU1H300Q - N-Channel Advanced Power MOSFET
RU1H36L - N-Channel Advanced Power MOSFET
RU1H36R - N-Channel Advanced Power MOSFET
RU1H36S - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.

Published: Apr 10, 2017 |