Datasheet Details
| Part number | RU20C10H |
|---|---|
| Manufacturer | Ruichips |
| File Size | 427.18 KB |
| Description | Complementary Advanced Power MOSFET |
| Datasheet |
 RU20C10H Datasheet
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| Part number | RU20C10H |
|---|---|
| Manufacturer | Ruichips |
| File Size | 427.18 KB |
| Description | Complementary Advanced Power MOSFET |
| Datasheet |
RU20C10H Datasheet
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• N-Channel 20V/10A, RDS (ON) =12mΩ(Typ.) @ VGS=4.5V RDS (ON) =15mΩ(Typ.) @ VGS=2.5V • P-Channel D2 D2 D1 D1 -20V/-10A, RDS (ON) =20mΩ (Typ.) @ VGS=-4.5V RDS (ON) =30mΩ (Typ.) @ VGS=-2.5V • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Switch G2 S2 G1 pin1 S1 Only SOP-8 Use mes Absolute Maximum Ratings ti Symbol Parameter g Common Ratings (TA=25°C Unless Otherwise Noted) n VDSS Drain-Source Voltage he VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink For IDP① 300μs Pulse Drain Current Tested TA=25°C Complementary MOSFET N-Channel P-Channel Unit 20 -20 V ±12 ±12 150 150 °C -55 to 150 -55 to 150 °C 1 1 A 40 40 A ID② Continuous Drain Current(VGS=±10V) TA=25°C 10 -10 A TA=70°C 5 -5 PD Maximum Power Dissipation TA=25°C 1.25 1.25 W TA=70°C 0.75 0.75 RJC Thermal Resistance-Junction to Case TBD TBD °C/W RJA③ Thermal Resistance-Junction to Ambient 62.5 62.5 °C/W Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed TBD TBD mJ Shenzhen City Ruichips Semiconductor Co., Ltd Rev.
A– July., 2017 1 www.ruichips.com sales.Mr.wang13826508770 www.sztssd.com RU20C10H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20C10H Unit Min.
Typ.
sales.Mr.wang13826508770 www.sztssd.com RU20C10H Complementary Advanced Power.
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