Datasheet4U Logo Datasheet4U.com

RU20C4C6 Datasheet Complementary Advanced Power MOSFET

Manufacturer: Ruichips

📥 Download Datasheet

Datasheet Details

Part number RU20C4C6
Manufacturer Ruichips
File Size 379.69 KB
Description Complementary Advanced Power MOSFET
Download RU20C4C6 Download (PDF)

General Description

D2 S1 D1 G2 S2 G1 SOT23-6 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=±4.5V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

B– AUG., 2015 1 S1 S2 Complementary MOSFET N-Channel P-Channel Unit 20 -20 V ±12 ±12 150 150 °C -55 to 150 -55 to 150 °C TA=25°C 1.4 -1.1 A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C 16 4 3.2 1.25 0.8 TBD 100 -10 -2.5 -2 1.25 0.8 TBD 100 A A W °C/W °C/W TBD TBD mJ www.ruichips.com RU20C4C6 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VGS=0V, IDS=-250µA N P VDS=20V, VGS=0V N IDSS Zero Gate Voltage Drain Current TJ=125°C VDS=-20V, VGS=0V P TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA N VDS=VGS, IDS=-250µA P IGSS Gate Leakage Current VGS=±12V, VDS=0V N VGS=±12V, VDS=0V P VGS=4.5V, IDS=4A N RDS(ON)⑤ Drain-Source On-state Resistance VGS=-4.5V, IDS=-2.5A VGS=2.5V, IDS=3.5A P N VGS=-2.5V, IDS=-2A P Diode Characteristics VSD⑤ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=4A,

Overview

RU20C4C6 Complementary Advanced Power MOSFET.

Key Features

  • N-Channel 20V/4A, RDS (ON) =30mΩ(Typ. ) @ VGS=4.5V RDS (ON) =38mΩ(Typ. ) @ VGS=2.5V.
  • P-Channel -20V/-2.5A, RDS (ON) =70mΩ (Typ. ) @ VGS=-4.5V RDS (ON) =100mΩ (Typ. ) @ VGS=-2.5V.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

More Datasheets from Ruichips

Part Number Description
RU20C10H Complementary Advanced Power MOSFET
RU20120L N-Channel Advanced Power MOSFET
RU20130L N-Channel Advanced Power MOSFET
RU2013H N-Channel Advanced Power MOSFET
RU2020H N-Channel Advanced Power MOSFET
RU2021H N-Channel Advanced Power MOSFET
RU205B N-Channel Advanced Power MOSFET
RU206G N-Channel Advanced Power MOSFET
RU207C N-Channel Advanced Power MOSFET
RU2090M N-Channel Advanced Power MOSFET