Datasheet Details
| Part number | RU2HE2D |
|---|---|
| Manufacturer | Ruichips |
| File Size | 235.09 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU2HE2D-Ruichips.pdf |
|
|
Overview: RU2HE2D N-Channel Advanced Power MOSFET MOSFET.
| Part number | RU2HE2D |
|---|---|
| Manufacturer | Ruichips |
| File Size | 235.09 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU2HE2D-Ruichips.pdf |
|
|
|
SOT-223 Applications • Power Management • DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID Continuous Drain Current TA=25°C TA=70°C PD ② RθJA Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 200 ±20 150 -55 to 150 1 4.5 ① 1.2 0.9 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.
B – JUL., 2011 www.ruichips.com RU2HE2D Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2HE2D Unit Min.
Typ.
| Part Number | Description |
|---|---|
| RU2HE5L | N-Channel Advanced Power MOSFET |
| RU2H15S | N-Channel Advanced Power MOSFET |
| RU2H30Q | N-Channel Advanced Power MOSFET |
| RU2H30R | N-Channel Advanced Power MOSFET |
| RU2H30S | N-Channel Advanced Power MOSFET |
| RU2H50Q | N-Channel Advanced Power MOSFET |
| RU2H50R | N-Channel Advanced Power MOSFET |
| RU2H50S | N-Channel Advanced Power MOSFET |
| RU20120L | N-Channel Advanced Power MOSFET |
| RU20130L | N-Channel Advanced Power MOSFET |