RU2HE5L - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S

Features

200V/4.2A, RDS (ON) =1Ω(tpy. )@VGS=10V RDS (ON) =1.1Ω(tpy. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU2HE5L
Manufacturer	Ruichips
File Size	270.47 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU2HE5L Datasheet
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RU2HE5L N-Channel Advanced Power MOSFET MOSFET Features • 200V/4.2A, RDS (ON) =1Ω(tpy.)@VGS=10V RDS (ON) =1.1Ω(tpy.)@VGS=4.

Published: Apr 25, 2016 |