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RU2HE5L Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU2HE5L N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU2HE5L
Manufacturer Ruichips
File Size 270.47 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU2HE5L-Ruichips.pdf

General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 200 ±20 175 -55 to 175 4.2 ① 16 ② 4.2 3 40 20 3.75 10 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– JUN., 2011 www.ruichips.com RU2HE5L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2HE5L Unit Min.

Typ.

Key Features

  • 200V/4.2A, RDS (ON) =1Ω(tpy. )@VGS=10V RDS (ON) =1.1Ω(tpy. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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