RU6581L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU6581L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU6581L
Manufacturer	Ruichips
File Size	290.61 KB
Description	N-Channel Advanced Power MOSFET
Download	RU6581L Download (PDF)

General Description

TO-252 Applications • Switching Application Systems • UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– JUL., 2012 Rating 65 ±25 175 -55 to 175 ① 81 ② 324 ① 81 52 96 48 1.55 Unit V °C °C A A A W W °C/W 169 mJ www.ruichips.com RU6581L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6581L Unit Min.

Typ.

Overview

RU6581L N-Channel Advanced Power MOSFET MOSFET.

Key Features

65V/81A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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