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RU6581L - N-Channel Advanced Power MOSFET

Description

TO-252 Applications Switching Application Systems UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperatur

Features

  • 65V/81A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU6581L
Manufacturer Ruichips
File Size 290.61 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6581L Datasheet

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Full PDF Text Transcription

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RU6581L N-Channel Advanced Power MOSFET MOSFET Features • 65V/81A, RDS (ON) =7mΩ(Typ.
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