RU6581R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU6581R n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU6581R
Manufacturer	Ruichips
File Size	300.00 KB
Description	N-Channel Advanced Power MOSFET
Download	RU6581R Download (PDF)

General Description

TO-220 Applications • Switching Application Systems • UPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 65 ±25 175 -55 to 175 ① 81 ② 324 ① 81 58 111 56 1.35 182 Unit V °C °C A A A W W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2012 www.ruichips.com RU6581R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6581R Unit Min.

Typ.

Overview

RU6581R N-Channel Advanced Power MOSFET MOSFET.

Key Features

65V/81A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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