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RU6H4R Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU6H4R N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU6H4R
Manufacturer Ruichips
File Size 305.81 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU6H4R-Ruichips.pdf

General Description

Applications • High efficiency switch mode power supplies • Lighting Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2013 1 GD S TO220 D G S N-Channel MOSFET Rating Unit TC=25°C 600 ±30 150 -55 to 150 4 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 16 A 4 A 2.5 83 W 33 1.5 °C/W 62.5 °C/W 88 mJ .ruichips.

RU6H4R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H4R Min.

Key Features

  • 600V/4A, RDS (ON) =1800mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Fast Switching.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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