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RU8099R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU8099R
Manufacturer Ruichips
File Size 437.30 KB
Description N-Channel Advanced Power MOSFET
Download RU8099R Download (PDF)

General Description

TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings StoragEeAST②emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed -55 to 150 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 90 ±25 175 -55 to 175 ① 90 360 ① 90 65 175 86 0.86 62.5 1306 Unit V °C °C A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.A –SEP., 2010 www.ruichips.com RU8099 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU8099 Unit Min.

Typ.

Max.

Overview

RU8099 N-Channel Advanced Power MOSFET.

Key Features

  • 90V/90A RDS (ON)=8mΩ(Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Extremely high dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.