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RU80T4H Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU80T4H N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU80T4H
Manufacturer Ruichips
File Size 301.71 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU80T4H-Ruichips.pdf

General Description

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2013 1 S1 S2 Dual N-Channel MOSFET Rating Unit TA=25°C 80 ±16 150 -55 to 150 2.3 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C 16 A 4 A 3.2 2 W 1.3 - °C/W 62.5 °C/W - mJ .ruichips.

RU80T4H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80T4H Min.

Key Features

  • 80V/4A, RDS (ON) =70mΩ(Typ. )@VGS=10V RDS (ON) =80mΩ(Typ. )@VGS=4.5V RDS (ON) =90mΩ(Typ. )@VGS=2.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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RU80T4H Distributor