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RU8590S Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU8590S N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU8590S
Manufacturer Ruichips
File Size 378.93 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU8590S-Ruichips.pdf

General Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 85 ±25 175 -55 to 175 90 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 360 A 90 A 64 188 W 94 0.8 °C/W 62.5 °C/W 306 mJ Ruichips Semiconductor Co., Ltd Rev.

A– JAN., 2015 1 www.ruichips.com RU8590S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU8590S Min.

Typ.

Key Features

  • 85V/90A, RDS (ON) =5.8mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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RU8590S Distributor