RU8H7R Datasheet | Ruichips

Features - 800V/7A, RDS (ON) =1.6Ω (Typ.) @ VGS=10V - Gate charge minimized - Low Crss( Typ. 15p F) - Extremely high dv/dt capability - 100% avalanche tested - Lead Free and Green Available N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 Applications - High efficiency switch mode power supplies - Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A - MAY.,...