MMBTSC2411 Datasheet | SEMTECH

NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups P, Q and R according to its DC current gain. .. Absolute Maximum Ratings (T a = 25 OC) Symbol VCBO VCEO VEBO IC Ptot Tj TS SOT-23 Plastic Package V al ue 40 32 5 500 200 150 -55 to +150 Unit V V V m A m W Parameter C o ll e ct o r B as e V o lt a g e Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at T a =25 C Symbol P Q R h FE h FE h FE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) f T Cob Min. 82 120 180 40 32 5 Typ. 250 6 Max. 180 270 390 1 1 0.4 Unit V V V µA µA V MHz p F Parameter DC Current Gain at VCE = 3 V, IC = 100 m A Collector Base Breakdown Voltage at IC= 100 µA Collector Emitter Breakdown Voltage at IC= 1 m A Emitter Base Breakdown Voltage at IE= 100 µA Collector Cutoff Current at VCB= 20 V Emitter Cutoff Current at VEB = 4 V Collector Saturation Voltage at IC = 500 m A, IB = 50 m A Transition frequency at VCE = 5 V, -IE = 20 m A, f = 100 MHz Output Capacitance at VCB = 10 V, IE = 0 A, f = 1 MHz РАДИОТЕХ-ТРЕЙД ® Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: .rct.ru .. SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated :...