SFT8600-5 - 1 AMP 1000 VOLTS NPN TRANSISTOR

SSDI

Key Features

BVCEO to 400 volts.
Very Low Saturation Voltage.
Very Low Leakage.
High Gain from 20 mA to 250 mA.
200°C Operating, Gold Eutectic Die Attach.
Superior Performance over JEDEC 2N5010-15 Series.
High Speed Switching tf = 0.4µS TYP Maximum Ratings Collector.
Emitter Voltage (RBE = 1KΩ) Collector.
Base Voltage Emitter.
Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 100º C Derate above 25º C Operating and Sto.

SFT8600-5 1 amp 1000 volts npn transistor by SSDI - Datasheet Preview

Datasheet Details

Part number	SFT8600-5
Manufacturer	SSDI
File Size	117.61 KB
Description	1 AMP 1000 VOLTS NPN TRANSISTOR
Datasheet	SFT8600-5 Datasheet

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Other Datasheets by SSDI

Part Number	Description
SFT8600-4	1 AMP 1000 VOLTS NPN TRANSISTOR
SFT8600	1 AMP 1000 Volts NPN Transistor
SFT8600S.22	1 AMP NPN Transistor
SFT8600S.5	1 AMP 1000 Volts NPN Transistor
SFT8600S.5	1 AMP NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT8600 __ __ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package /5 = TO-5 SFT8600/5 1 AMP 1000 Volts NPN Transistor FEATURES:  BVCEO to 400 volts  Very Low Saturation Voltage  Very Low Leakage  High Gain from 20 mA to 250 mA  200°C Operating, Gold Eutectic Die Attach  Superior Performance over JEDEC 2N5010-15 Series  High Speed Switching tf = 0.