Datasheet4U Logo Datasheet4U.com

SFT8600S.5 - 1 AMP 1000 Volts NPN Transistor

Key Features

  • BVCEO minimum 400 volts.
  • Very Low Saturation Voltage.
  • Very Low Leakage.
  • High Gain from 20 mA to 250 mA.
  • 200° C Operating, Gold Eutectic Die Attach.
  • Superior Performance over JEDEC 2N5010-15 Series.
  • High Speed Switching tf = 0.4µS TYP SFT8600S.5 1 AMP 1000 Volts NPN Transistor Maximum Ratings Collector.
  • Emitter Voltage (RBE = 1KΩ) Collector.
  • Base Voltage Emitter.
  • Base Voltage Collector Current Base Curre.

📥 Download Datasheet

Datasheet Details

Part number SFT8600S.5
Manufacturer SSDI
File Size 27.06 KB
Description 1 AMP 1000 Volts NPN Transistor
Datasheet download datasheet SFT8600S.5 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SFT8 SUPER FAST RECTIFIER DIODES EIC discrete Semiconductors
SFT8 (SFT1 - SFT9) SUPER FAST RECTIFIER DIODES SynSemi
SFT825N-S surface-mount LED Seoul Semiconductor
SFT-0100 Transimpedance Amplifier Sirenza Microdevices
SFT1 SUPER FAST RECTIFIER DIODES EIC discrete Semiconductors

Other Datasheets by SSDI

Part Number Description
SFT8600S.5 1 AMP NPN Transistor
SFT8600S.22 1 AMP NPN Transistor
SFT8600 1 AMP 1000 Volts NPN Transistor
SFT8600-4 1 AMP 1000 VOLTS NPN TRANSISTOR
SFT8600-5 1 AMP 1000 VOLTS NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET FEATURES: • BVCEO minimum 400 volts • Very Low Saturation Voltage • Very Low Leakage • High Gain from 20 mA to 250 mA • 200° C Operating, Gold Eutectic Die Attach • Superior Performance over JEDEC 2N5010-15 Series • High Speed Switching tf = 0.4µS TYP SFT8600S.5 1 AMP 1000 Volts NPN Transistor Maximum Ratings Collector – Emitter Voltage (RBE = 1KΩ) Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25º C Derate above 175º C Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: SMD.5 .304 .288 3x .020 .010 .030 MIN .