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SFT8600S.5 - 1 AMP 1000 Volts NPN Transistor

Features

  • BVCEO minimum 400 volts.
  • Very Low Saturation Voltage.
  • Very Low Leakage.
  • High Gain from 20 mA to 250 mA.
  • 200° C Operating, Gold Eutectic Die Attach.
  • Superior Performance over JEDEC 2N5010-15 Series.
  • High Speed Switching tf = 0.4µS TYP SFT8600S.5 1 AMP 1000 Volts NPN Transistor Maximum Ratings Collector.
  • Emitter Voltage (RBE = 1KΩ) Collector.
  • Base Voltage Emitter.
  • Base Voltage Collector Current Base Curre.

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Datasheet preview – SFT8600S.5

Datasheet Details

Part number SFT8600S.5
Manufacturer SSDI
File Size 27.06 KB
Description 1 AMP 1000 Volts NPN Transistor
Datasheet download datasheet SFT8600S.5 Datasheet
Additional preview pages of the SFT8600S.5 datasheet.

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Full PDF Text Transcription

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Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET FEATURES: • BVCEO minimum 400 volts • Very Low Saturation Voltage • Very Low Leakage • High Gain from 20 mA to 250 mA • 200° C Operating, Gold Eutectic Die Attach • Superior Performance over JEDEC 2N5010-15 Series • High Speed Switching tf = 0.4µS TYP SFT8600S.5 1 AMP 1000 Volts NPN Transistor Maximum Ratings Collector – Emitter Voltage (RBE = 1KΩ) Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25º C Derate above 175º C Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: SMD.5 .304 .288 3x .020 .010 .030 MIN .
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