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SFT8600 - 1 AMP 1000 Volts NPN Transistor

Key Features

  • BVCEO to 400 volts.
  • Very Low Saturation Voltage.
  • Very Low Leakage.
  • High Gain from 20 mA to 250 mA.
  • 200° C Operating, Gold Eutectic Die Attach.
  • Superior Performance over JEDEC 2N5010-15 Series.
  • High Speed Switching tf = 0.4µS TYP SFT8600 1 AMP 1000 Volts NPN Transistor Maximum Ratings Collector.
  • Emitter Voltage (RBE = 1KΩ) Collector.
  • Base Voltage Emitter.
  • Base Voltage Collector Current Base Current Total.

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Datasheet Details

Part number SFT8600
Manufacturer SSDI
File Size 153.86 KB
Description 1 AMP 1000 Volts NPN Transistor
Datasheet download datasheet SFT8600 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET FEATURES: • BVCEO to 400 volts • Very Low Saturation Voltage • Very Low Leakage • High Gain from 20 mA to 250 mA • 200° C Operating, Gold Eutectic Die Attach • Superior Performance over JEDEC 2N5010-15 Series • High Speed Switching tf = 0.