SPA555 Datasheet | SSDI

Features : - - - - - - - 1200V Silicon Carbide Schottky Rectifier Average Output Current 20 Amps No Reverse Recovery No Forward Recovery No Switching Time Change over Temperature Small Package Size (1.25 x 1.25 x 0.350”) Cases with Aluminum Heatsink are Available. Consult Factory - TX and TXV & S Level Screening Available Maximum Ratings Peak Repetitive and Peak Surge Reverse Voltage Average Rectified Forward Current 4/ (Resistive Load, 60 Hz Sine Wave, TC = 55°C) Peak Surge Current 3/ (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Junction Temperature Maximum Thermal Resistance Junction to Case SPA555 ( ) SPA555 (L) SPA555M SPA555N Symbol VRRM VRSM VR IO IFSM Top & Tstg TJ RθJC Value 1000 1200 20 30 -55 to +150 -55 to +200 1.5 Units Volts Amps Amps ºC ºC ºC/W SPA555 (SM) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RA0038C Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SPA555 Series Electrical Characteristic 5/ Instantaneous Forward Voltage Drop (TA=25ºC, 300 - 500 µsec pulse) Instantaneous Forward Voltage Drop (300 - 500 µsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 150ºC, 300 µsec pulse minimum) Junction Capacitance (VR = 10V, f = 1MHz, TA = 25°C) IF = 2.0 A IF = 5.0 A IF = 10 A TA= -55ºC, IF = 5 A TA= 150 ºC, IF = 5 A Symbol VF1 VF2 VF3 VF4 VF5 IR1 IR2 CJ Min - - - - - - - - - - - - - -...