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SST29LE512 - 512 Kilobit (64K x8) Page-Mode EEPROM

Download the SST29LE512 datasheet PDF. This datasheet also covers the SST29EE512 variant, as both devices belong to the same 512 kilobit (64k x8) page-mode eeprom family and are provided as variant models within a single manufacturer datasheet.

General Description

The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Key Features

  • Single Voltage Read and Write Operations.
  • 5.0V-only for SST29EE512.
  • 3.0-3.6V for SST29LE512.
  • 2.7-3.6V for SST29VE512.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Low Power Consumption.
  • Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V.
  • Standby Current: 10 µA (typical).
  • Fast Page-Write Operation.
  • 128 Bytes per Pag.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SST29EE512-SST.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SST29LE512
Manufacturer SST
File Size 265.94 KB
Description 512 Kilobit (64K x8) Page-Mode EEPROM
Datasheet download datasheet SST29LE512 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
512 Kilobit (64K x8) Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 512 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 2.5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) Data Sheet • Fast Read Access Time – 5.0V-only operation: 70 and 90 ns – 3.0-3.6V operation: 150 and 200 ns – 2.7-3.