Description
The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Features
- Single Voltage Read and Write Operations.
- 5.0V-only for SST29EE512.
- 3.0-3.6V for SST29LE512.
- 2.7-3.6V for SST29VE512.
- Superior Reliability.
- Endurance: 100,000 Cycles (typical).
- Greater than 100 years Data Retention.
- Low Power Consumption.
- Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V.
- Standby Current: 10 µA (typical).
- Fast Page-Write Operation.
- 128 Bytes per Pag.
SST29LE512 Datasheet
