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M29W004BB Datasheet 4 Mbit 512kb X8 / Boot Block Low Voltage Single Supply Flash Memory

Manufacturer: STMicroelectronics

Overview: M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin TSOP40 (N) 10 x 20mm s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s TEMPORARY BLOCK UNPROTECTION MODE UNLOCK BYPASS PROGRAM MAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby A0-A18 W E G RP M29W004BT M29W004BB RB 19 VCC s s 8 DQ0-DQ7 s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29W004BT: EAh – Bottom Device Code M29W004BB: EBh s s VSS AI02954 March 2000 1/20 M29W004BT, M29W004BB Figure 2. TSOP Connections Table 1.

General Description

The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed.

These operations can be performed using a single low voltage (2.7 to 3.6V) supply.

On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

Key Features

  • iming requirements. Output Disable. The Data Inputs/Outputs are in the high impedance state when Output Enable is.

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M29W004BB Distributor