M29W004T Datasheet | STMicroelectronics

M29W004T M29W004B 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Byte-by-Byte - Status Register bits and Ready/Busy Output MEMORY BLOCKS - Boot Block (Top or Bottom location) - Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION - Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION - Defectivity below 1ppm/year ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code, M29W004T: EAh - Device Code, M29W004B: EBh DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in June 1999 TSOP40 (N) 10 x 20 mm Figure 1. Logic Diagram 19 A0-A18 W E G RP M29W004T M29W004B 8 DQ0-DQ7 AI02063 1/30 This is information on a product still in production but not remended for new designs. M29W004T, M29W004B Figure 2. TSOP Pin Connections A16 A15 A14 A13 A12 A11 A9 A8 W RP NC RB A18 A7 A6 A5 A4 A3 A2 A1 1 40 A17 VSS NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 G VSS E A0 Table 1. Signal Names A0-A18 DQ0-DQ7 E G W RP RB VCC VSS Address Inputs...