M29W004BT Datasheet | STMicroelectronics

M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME - 10µs by Byte typical 11 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 8 Main Blocks s s s s PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm - Embedded Multi-Block/Chip Erase algorithm - Status Register Polling and Toggle Bits - Ready/Busy Output Pin TSOP40 (N) 10 x 20mm s ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s TEMPORARY BLOCK UNPROTECTION MODE UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming LOW POWER CONSUMPTION - Standby and Automatic Standby A0-A18 W E G RP M29W004BT M29W004BB RB 19 VCC s s 8 DQ0-DQ7 s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION - Defectivity below 1 ppm/year ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Top Device Code M29W004BT: EAh - Bottom Device Code M29W004BB: EBh s s AI02954 March 2000 1/20 M29W004BT, M29W004BB Figure 2. TSOP Connections Table 1. Signal Names A0-A18 DQ0-DQ7 Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Supply Voltage Ground Not Connected...