M58WR128EB Description
VFBGA Connections (Top view through package). 11 Address Inputs (A0-A22). 11 Data Input/Output (DQ0-DQ15).
M58WR128EB Key Features
- VDD = 1.65V to 2.2V for Program, Erase and Read
- VDDQ = 1.65V to 3.3V for I/O Buffers
- VPP = 12V for fast Program (optional)
- Synchronous Burst Read mode: 54MHz
- Asynchronous/ Synchronous Page Read mode
- Random Access: 70, 80, 100ns
- 8µs by Word typical for Fast Factory Program
- Double/Quadruple Word Program option
- Enhanced Factory Program options
- Multiple Bank Memory Array: 4 Mbit Banks