SD1528-06 Datasheet | STMicroelectronics

DESCRIPTION The SD1528-06 is a gold metallized epitaxial silicon NPN power transistor. The SD1528-06 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1528-06 is packaged in the .280” input matched stripline package, resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 1.5 87.5 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 °C/W 1/4 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES h FE IC = 10m A IC = 25m A IE = 1m A VCE = 50V VCE = 5V IE = 0m A VBE = 0V IC = 0m A IE = 0m A IC = .1A 65 65 3.5 - 10 - - - - - - - - 2 200 V V V m A - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP ηc Note: f = 1025 - 1150MHz PIN = 1.5 W f = 1025 - 1150MHz PIN = 1.5 W f = 1025 - 1150MHz PIN = 1.5 W = 10 µsec, Duty Cycl e VCE = 50 V VCE = 50 V VCE = 50 V 15 10 30 - - - - - -...