SD1726 Datasheet | STMicroelectronics

DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 10 233 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance °C/W 1/7 SD1726 (THA15) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO I CEO ICES h FE DYNAMIC Symbol IC = 100m A IC = 100m A IC = 100m A IE = 10m A VCE = 30V VCE = 60V VCE = 6V IE = 0m A VBE = 0V IB = 0m A IC = 0m A IE = 0m A IE = 0m A IC = 1.4A 110 110 55 4.0 - - 18 - - - - - - - - - - - 5 5 43.5 V V V V m A m A - Test Conditions Value Min. Typ. Max. Unit POUT G P- IMD- η c- COB Note: P OUT - f1 f = 30 MHz POUT = 150 WPEP POUT = 150 WPEP POUT = 150 WPEP f = 1 MHz = 30 W PEP, G P VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V...