SD1729
SD1729 is RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS manufactured by STMicroelectronics.
DESCRIPTION
The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
70 35 4.0 12 175 +200
- 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
November 1992
Junction-Case Thermal Resistance
°C/W
1/4
SD1729 (TH416)
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCES BVCEO BVEBO ICES h FE
IC = 50 m A IC = 100 m A IE = 20 m A VCE = 35 V VCE = 5 V
VBE = 0 V IB = 0 m A IC = 0 m A IE = 0 m A IC = 7 A
70 35 4.0
- 18
- -
- -
- -
- - 20 50
V V V m A
- DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT GP IMD- ηc COB
Note:
- f1 f = 30 MHz POUT = 130 W PEP POUT = 130 W PEP POUT = 130 W PEP f = 1 MHz =
30.00 MHz, f2
VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V
ICQ = 150 m A ICQ = 150 m A ICQ = 150 m A ICQ = 150 m A
130 12
- 37
- -...
