SD1731
SD1731 is RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS manufactured by STMicroelectronics.
DESCRIPTION
The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Valu e Un it
1. Collector 2. Emitter
3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation (Theatsink ≤ 25°C) Junction Temperature Storage Temperature
110 55 4.0 20 233 +200
- 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) RTH(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 0.55 0.2 °C/W °C/W
1/7
July 10, 1995
SD1731 (TH562)
ELECTRICAL SPECIFICATIONS STATIC (Tcase = 25°C)
Symbo l T est Co nditions Value Min . T yp. Max. Unit
BVCBO BVCEO BVEBO ICEO ICES h FE
IC = 200 m A IC = 200 m A IE = 20 m A VCE = 30 V VCE = 55 V VCE = 6 V
IE = 0 m A IB = 0 m A IC = 0 m A IE = 0 m A IE = 0 m A IC = 10 A
110 55 4.0
- - 15
- -
- -
- -
- -
- 5 10 80
V V V m A m A
- DYNAMIC (Theatsink = 25°C)
Symbo l Test Cond ition s Valu e Min. T yp. Max. Un it
POUT GP
- IMD- ηc- COB f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz
VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V
ICQ = 150 m A ICQ = 150 m A ICQ = 150 m A ICQ = 150 m A
220 13
- 40
- -
- -
- 330
- -
-...
