SD1733 Datasheet | STMicroelectronics

DESCRIPTION The SD1733 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF munications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 3.25 127 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance °C/W 1/4 SD1733 (TH513) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO h FE IC = 100m A IC = 200m A IE = 10m A VCE = 6V VBE = 0V IB = 0m A IC = 0m A IC = 1.4A 110 55 4.0 19 - - - - - - - 50 - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT G P- IMD- η c- COB Note: - f1 f = 30 MHz POUT = 75 W PEP POUT = 75 W PEP POUT = 75 W PEP f = 1 MHz = 30.00 MHz, f2 VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V 75 14 - 37 - - - - - -...