SD1730
SD1730 is RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS manufactured by STMicroelectronics.
DESCRIPTION
The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF munications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
70 35 4.0 16 320 +200
- 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
September 7, 1994
Junction-Case Thermal Resistance
°C/W
1/6
SD1730 (TH560)
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCES BVCEO BVEBO I CEO ICES h FE DYNAMIC
Symbol
I C = 100 m A I C = 200 m A I E = 20 m A VCE = 30 V VCE = 35 V VCE = 5 V
VBE = 0 V IB = 0 m A IC = 0 m A IE = 0 m A IE = 0 m A IC = 7 A
70 35 4.0
- - 15
- -
- -
- -
- -
- 5 5 60
V V V m A m A
- Test Conditions
Value Min . Typ. Max.
Unit
POUT PG- IMD- η c- COB f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz
VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V VCE = 28 V
ICQ = 750 m A ICQ = 750 m A ICQ = 750 m A ICQ = 750 m A ICQ = 750 m A
220 12
- 40
- -
- -
- - 450...
