SD1732 Datasheet | STMicroelectronics

DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 45 25 4.0 2 x 2.6 65 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance °C/W 1/6 SD1732 (TDS595) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO h FE IC = 20m A IC = 40m A IE = 5m A VCE = 20V IE = 0m A IB = 0m A IC = 0m A IC = 0.5A 45 25 3.0 10 - - - - - - - - - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD3- CMD- - COB Note: f = 845 MHz POUT = 14 W POUT = 14 W POUT = 14 W f = 1 MHz - 8 d B ref - 7 d B ref Carrier - 16 d B ref VCE = 25 V VCE = 25 V VCE = 25 V VCE = 25 V VCB = 25 V ICQ = 2 x 850 m A ICQ = 2 x 850 m A ICQ = 2 x 850 m A ICQ = 2 x 850 m A 14 8.5 - -...