STB5BK50Z-1 Datasheet | STMicroelectronics

Super MESH™ series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST’s well established strip. based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Data Shee APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP5NK50Z STP5NK50ZFP STD5NK50ZT4 STD5NK50Z-1 STB5NK50Z-1 April 2003 MARKING P5NK50Z P5NK50ZFP D5NK50Z D5NK50Z B5NK50Z PACKAGE TO-220 TO-220FP DPAK IPAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE TUBE 1/14 . . Data Sheet 4 U . .. STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP5NK50Z STB5NK50Z-1 Value STP5NK50ZFP STD5NK50Z STD5NK50Z-1 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100p F, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 4.4 2.7 17.6 70 0.56 500 500 ± 30 4.4 (- ) 2.7 (- ) 17.6 (- ) 25 0.2 3000 4.5 2500 -55 to 150 -55 to 150 4.4 2.7 17.6 70 0.56 V V V A A A W W/°C V V/ns V °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤4.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (- ) Limited only by maximum temperature allowed THERMAL DATA TO-220 I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max . Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.78 TO-220FP 5 62.5 300 DPAK 1.78 °C/W °C/W °C et4U. Data Shee AVALANCHE...