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STB5BK50Z-1 - N-CHANNEL POWER MOSFET

Description

The SuperMESH™ series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST’s well established stripDataSheet4U.com based PowerMESH™ layout.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 DataSheet4U.

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Full PDF Text Transcription

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www.DataSheet4U.com STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 s s s s s s VDSS 500 500 500 500 500 V V V V V RDS(on) < 1.5 < 1.5 < 1.5 < 1.5 < 1.5 Ω Ω Ω Ω Ω ID 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A Pw 70 W 25 W 70 W 70 W 70 W 1 2 3 TYPICAL RDS(on) = 1.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 I2PAK 3 1 3 12 TO-220FP 3 2 1 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST’s well established stripDataSheet4U.
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