STB9NK60Z Overview
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Doc ID 8799 Rev 3 1/19 .st.
STB9NK60Z Key Features
- Extremely high dv/dt capability
- Improved ESD capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances