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STB9NK60ZFP Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: STMicroelectronics

Overview: w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D PAK/I PAK S a Zener-Protected SuperMESH™Power MOSFET at 2 2 VDSS 600 600 600 600 V V V V RDS(on) < 0.95 < 0.95 < 0.95 < 0.95 ID 7 7 7 7 A A A A Pw 125 W 30 W 125 W 125 W TO-220 et 4U . m o c STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 Ω Ω Ω Ω s s s s s s s TYPICAL RDS(on) = 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP9NK60Z /.

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