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STB9NK60ZFD Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: STMicroelectronics

Overview: w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D PAK S a Fast Diode SuperMESH™ MOSFET at 2 VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 104 W 32 W 104 W et 4U . m o c STP9NK60ZFD - STP9NK60ZFDFP STB9NK60ZFD TARGET DATA TYPE STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFD s s s s s s s TYPICAL RDS(on) = 0.

General Description

The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode.

Such series complements the “FDmesh™” Advanced Technology.

APPLICATIONS s HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS ORDERING INFORMATION SALES TYPE STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFDT4 MARKING P9NK60ZFD P9NK60ZFDFP B9NK60ZFD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL w w w .D t a S a e h INTERNAL SCHEMATIC DIAGRAM t e U 4 .c 3 1 m o 1 3 2 TO-220FP D2PAK July 2003 w w w .D at h S a t e e 4U .

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/9 STP9NK60ZFD.

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