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STB9NK60ZD Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: STMicroelectronics

Overview: w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D PAK S a Fast Diode SuperMESH™ MOSFET at 2 VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 125 W 30 W 125 W et 4U . m o c STP9NK60ZD - STF9NK60ZD STB9NK60ZD ADVANCED DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD s s s s s s TYPICAL RDS(on) = 0.

General Description

The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode.

Such series complements the “FDmesh™” Advanced Technology.

APPLICATIONS HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS s ORDERING INFORMATION SALES TYPE MARKING P9NK60ZD F9NK60ZD B9NK60ZD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL STP9NK60ZD STF9NK60ZD STB9NK60ZDT4 w w w .D t a S a e h INTERNAL SCHEMATIC DIAGRAM t e U 4 .c 3 1 m o 1 3 2 TO-220FP D2PAK November 2003 w w w .D at h S a t e e 4U .

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP9NK60ZD.

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