STBV42 Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV42G and STBV42G-AP are supplied using halogen-free molding pound.
STBV42 Key Features
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed