STBV68 Datasheet | STMicroelectronics

.. ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV68 is designed for use in pact fluorescent lamp application. TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value 600 400 9 0.6 1.2 0.3 0.6 0.9 -65 to 150 150 Unit V V V A A A A W o o September 2000 1/4 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 140 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5 V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 600 V V BE = 9 V I C = 1 m A L = 25m H 400 Min. Typ. Max. 250 1 Unit µA m A V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Fall Time I C = 0.1 A I C = 0.15 A I C = 0.25 A I C = 0.1 A I C = 0.15 A I C = 0.1 A I C = 0.25 A I C = 0.1 A I B1 = - I B2 = 20 m A I B = 20 m A I B = 50 m A I B = 100 m A I B = 20 m A I B = 50 m A V CE = 5 V V CE = 10 V V clamp = 300 V L =3 m H 7 3 0.35 0.8 3.0 0.75 1.5 5 1.0 1.2 15 6 V V V V V V BE(sat) ∗...