STBV42D Datasheet | STMicroelectronics

.. High voltage fast-switching NPN power transistor Preliminary data Features - - - - High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode Application - pact fluorescent lamps (CFLs) TO-92 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram Table 1. Device summary Marking BV42D Package TO-92 Packaging BAG Order code STBV42D March 2010 Doc ID 17236 Rev 1 1/8 .st. 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. .. Electrical ratings Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (t P < 5 ms) Base current Base peak current (t P < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 700 400 9 1 2 0.5 1 1 -65 to 150 °C 150 Unit V V V A A A A W Table 3. Symbol Rth...