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STBV42D - High voltage fast-switching NPN power transistor

Description

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Figure 1.

Features

  • High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode.

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www.DataSheet4U.com STBV42D High voltage fast-switching NPN power transistor Preliminary data Features ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode Application ■ Compact fluorescent lamps (CFLs) TO-92 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram Table 1. Device summary Marking BV42D Package TO-92 Packaging BAG Order code STBV42D March 2010 Doc ID 17236 Rev 1 1/8 www.st.
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