STBV42D Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Internal schematic diagram Table.
STBV42D Key Features
- High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode
- pact fluorescent lamps (CFLs)