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STGB6NB60HD - N-CHANNEL IGBT

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix “H” identifies a family optimized for high frequency application.

HIGH FR

Features

  • Type STGB6NB60HD.
  • VCES 600V VCE(sat) (Max)@ 25°C < 2.7V IC @100°C 6A LOWER CRES / CIES RATIO (NO CROSS.

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Full PDF Text Transcription

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www.DataSheet4U.com STGB6NB60HD N-CHANNEL 6A - 600V - D2PAK Low Drop PowerMESH™ IGBT PRELIMINARY DATA General features Type STGB6NB60HD ■ VCES 600V VCE(sat) (Max)@ 25°C < 2.7V IC @100°C 6A LOWER CRES / CIES RATIO (NO CROSS CONDUCTION SUSCEPTIBILITY) HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4micro H-family CO-PACKAGE WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 ■ ■ D²PAK ■ ■ Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application.
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