Datasheet Summary
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N-channel 30 V, 0.0028 Ω, 24 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET
Preliminary data
Features
Type STL90N3LLH6 VDSS 30 V RDS(on) max 0.004 Ω ID 24 A (1)
1. The value is rated according Rthj-pcb
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- RDS(on)
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge
PowerFLAT™ ( 6x5 )
Application
- Switching applications
Figure 1.
Internal schematic diagram
Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest...